Defect or Variation? Characterizing Standard Cell Behavior at 90 nm and Below

Defect or Variation? Characterizing Standard Cell Behavior at 90 nm and Below

Historically, design margin and defects have been viewed as different topics, one a part of design and the other a part of a test. Shrinking process geometries are making the two part of a continuum. This paper discusses the leakage and delay behavior associated with classic resistive defects and co...

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Veröffentlicht in:IEEE transactions on semiconductor manufacturing 2008-02, Vol.21 (1), p.46-54
1. Verfasser: Aitken, R.C.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Characterization
Circuit faults
Circuit testing
Continuums
defect modeling
Defects
Delay
Design for testability
design margin
Electronics
Exact sciences and technology
Geometry
History
Leakage
Lithography
Manufacturing
Microelectronic fabrication (materials and surfaces technology)
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
standard cells
Threshold voltage
Transistors
variation
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Beschreibung
Zusammenfassung:Historically, design margin and defects have been viewed as different topics, one a part of design and the other a part of a test. Shrinking process geometries are making the two part of a continuum. This paper discusses the leakage and delay behavior associated with classic resistive defects and compares it with transistor variation due to lithography.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2007.913191