Dopant Migration-Induced Interface Dipole Effect in n-Doped GaAs/AlGaAs Terahertz Detectors

A heterojunction interfacial workfunction internal photoemission (HEIWIP) terahertz detector with ~1times10 18 cm -3 n-type doped GaAs emitters in a multilayer GaAs/Al 0.13 Ga 0.87 As heterostructure is presented. The detection mechanism is based on free carrier absorption with a broad response extending to ~ 5.26 THz (57 mum), corresponding to an effective workfunction of ~ 21.8 meV, which is much smaller than the offset expected for an Al fraction of x = 0.13 at a 1times10 18 cm -3 doping. This is attributed to a reduction of the conduction band offset by interface dipole formation between the accumulated negative charges at the interface states and migrated positively charged donors in the barrier. The device has a peak responsivity of 0.32 A/W at ~ 26 mum at 5 K. It is demonstrated that the dopant migration-induced interface dipole effect can be used to extend the zero response threshold frequency ( f 0 ) of n-type HEIWIP detectors.