Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors

Mechanisms for dose-rate dependent effects of ionizing radiation are described. Bimolecular mechanisms are shown to produce reduced effects at high dose rates. Calculations using such mechanisms are shown to produce good agreement with data from devices affected by enhanced low dose-rate sensitivity...

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Veröffentlicht in:	IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.3009-3015
Hauptverfasser:	Hjalmarson, H.P., Pease, R.L., Devine, R.A.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accuracy Bimolecular reaction bipolar junction transistor Bipolar transistors Charge carrier processes cracking Devices dimerization Dosage dose rate ELDRS Equations excess base current Excitons hole Hydrogen interface trap Ionizing radiation Kinetic theory kinetics Laboratories Mathematical analysis Potential energy proton radiation recombination Semiconductor devices silicon dioxide Spontaneous emission
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Beschreibung
Zusammenfassung:	Mechanisms for dose-rate dependent effects of ionizing radiation are described. Bimolecular mechanisms are shown to produce reduced effects at high dose rates. Calculations using such mechanisms are shown to produce good agreement with data from devices affected by enhanced low dose-rate sensitivity (ELDRS).
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2008.2007487