Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse s...

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Veröffentlicht in:IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.2943-2947
Hauptverfasser: Black, J.D., Ball, D.R., Robinson, W.H., Fleetwood, D.M., Schrimpf, R.D., Reed, R.A., Black, D.A., Warren, K.M., Tipton, A.D., Dodd, P.E., Haddad, N.F., Xapsos, M.A., Kim, H.S., Friendlich, M.
Format: Artikel
Sprache:eng
Schlagworte:
Charge
CMOS technology
Collection
Heavy ion testing
Laboratories
Mathematical models
MOSFET circuits
multiple cell upset
NASA
Photoconductivity
Random access memory
Recovery
single event modeling
Single event upset
Single event upsets
Space technology
SRAM
SRAM chips
Static random access memory
Testing
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Zusammenfassung:A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for direct charge collection and the well-collapse source-injection mechanisms are predicted and compared to SRAM test data.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.2007231