A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power

A millimeter-wave power amplifier fabricated in 90 nm bulk CMOS technology consists of 3 identical cascode stages and on-chip matching networks (inter-stage, input, and output) implemented with wide-gap coplanar waveguides and M6-M5 (MIM) capacitors. The amplifier realizes a linear power gain of 19....

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE journal of solid-state circuits 2008-07, Vol.43 (7), p.1553-1562
Hauptverfasser:	Yanyu Jin, Sanduleanu, M.A.T., Long, J.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	60 GHz circuits Broadband amplifiers Circuits CMOS CMOS power amplifier CMOS technology Compressing Coplanar waveguides Gain Impedance matching Millimeter wave technology millimeter-wave (mm-wave) power amplifier MIM capacitors Network-on-a-chip Noise levels power amplifier (PA) Power amplifiers Power gain Power generation Wideband
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A millimeter-wave power amplifier fabricated in 90 nm bulk CMOS technology consists of 3 identical cascode stages and on-chip matching networks (inter-stage, input, and output) implemented with wide-gap coplanar waveguides and M6-M5 (MIM) capacitors. The amplifier realizes a linear power gain of 19.7 dB at 52.4 GHz and 10.3 dB at 60 GHz. Maximum saturated output power and output-referred compression point are and 3.1 dBm, respectively. Peak PAE is 4.2%. The 1.180.96 die consumes 75 mA when operating from a 2 V supply.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2008.922385