A Temperature-Stable Film Bulk Acoustic Wave Oscillator

This letter reports a passively temperature-compensated CMOS oscillator utilizing a film bulk acoustic resonator. The resonator exhibiting an f ldr Q product of 2-4 X 10 12 s -1 is composed of molybdenum, aluminum nitride, and a compensation material that has a positive temperature coefficient of Yo...

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Veröffentlicht in:	IEEE electron device letters 2008-04, Vol.29 (4), p.315-318
Hauptverfasser:	Wei Pang, Ruby, R.C., Parker, R., Fisher, P.W., Unkrich, M.A., Larson, J.D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Acoustic noise Acoustic wave devices, piezoelectric and piezoresistive devices Acoustic waves Acoustics Aluminum nitride Applied sciences Circuit properties CMOS Consumption Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Film bulk acoustic resonator (FBAR) Film bulk acoustic resonators Frequency measurement Integrated circuits Modulus of elasticity Molybdenum nonlinearity oscillator Oscillators Oscillators, resonators, synthetizers Phase noise Q factor Resonators Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon temperature compensation Temperature distribution Virtual manufacturing
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Zusammenfassung:	This letter reports a passively temperature-compensated CMOS oscillator utilizing a film bulk acoustic resonator. The resonator exhibiting an f ldr Q product of 2-4 X 10 12 s -1 is composed of molybdenum, aluminum nitride, and a compensation material that has a positive temperature coefficient of Young's modulus. The 604-MHz oscillator consumes 5.3 mW from a 3.3-V supply and achieves excellent phase noise performances of -102, -130, and -149 dBc/Hz at 1, 10, and 100 kHz carrier offsets, respectively. The oscillator's temperature-dependent frequency drift is less than 80 ppm over a temperature range of -35degC to +85degC.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2008.917116