An Unassisted, Low Trigger-, and High Holding-Voltage SCR (uSCR) for On-Chip ESD-Protection Applications

An Unassisted, Low Trigger-, and High Holding-Voltage SCR (uSCR) for On-Chip ESD-Protection Applications

A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mum/3.3-V fully salicided BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the unassisted SCR has a trigger voltage as low as 7 V to effectively protect deep-submicr...

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Veröffentlicht in:IEEE electron device letters 2007-12, Vol.28 (12), p.1120-1122
Hauptverfasser: Lifang Lou, Liou, J.J.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
BiCMOS integrated circuits
Breakdown voltage
Circuits
Current density
Design engineering
Devices
Electric potential
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Electrostatic discharge
Electrostatic discharge (ESD)
Exact sciences and technology
high holding voltage
Latch-up
low trigger voltage
Low voltage
Metal oxide semiconductors
Protection
Rectifiers
Robustness
silicon-controlled rectifier (SCR)
Thyristors
Voltage
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Beschreibung
Zusammenfassung:A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mum/3.3-V fully salicided BiCMOS process for electrostatic-discharge (ESD) applications. Without using an external trigger circuitry, the unassisted SCR has a trigger voltage as low as 7 V to effectively protect deep-submicrometer MOS circuits, a holding voltage higher than the supply voltage to minimize transient influence and avoid latch-up issue, and a second snapback current density exceeding 60 mA/mum to provide robust ESD-protection solutions.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.909838