Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates
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| Veröffentlicht in: | IEEE electron device letters 2007-06, Vol.28 (6), p.486-488 |
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| container_end_page | 488 |
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| container_issue | 6 |
| container_start_page | 486 |
| container_title | IEEE electron device letters |
| container_volume | 28 |
| creator | RAGNARSSON, Lars-Ake CHANG, Vincent S BIESEMANS, Serge HONG YU YU CHO, Hag-Ju CONARD, Thierry KAI MIN YIN DELABIE, Annelies SWERTS, Johan SCHRAM, Tom DE GENDT, Stefan |
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| doi_str_mv | 10.1109/LED.2007.896900 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2007-06, Vol.28 (6), p.486-488 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_912184018 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Integrated circuits Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates |
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