A 56-nm CMOS 99-mm2 8-Gb multi-level NAND flash memory with 10-MB/s program throughput

[...] noise cancellation circuits and the dual VDD-line scheme realize both a small die size and a fast programming.

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Bibliographische Detailangaben
Hauptverfasser:	TAKEUCHI, Ken, KAMEDA, Yasushi, IWAI, Makoto, SHIRAKAWA, Masanobu, ICHIGE, Masayuki, HATAKEYAMA, Kazuo, TANAKA, Shinichi, KAMEI, Teruhiko, FU, Jia-Yi, CEMEA, Adi, YAN LI, HIGASHITAM, Masaaki, FUJIMURA, Susumu, HEMINK, Gertjan, SATO, Shinji, OOWADA, Ken, LEE, Shih-Chung, HAYASHIDA, Naoki, JUN WAN, LUTZE, Jeffrey, TSAO, Shouchang, MOFIDI, Mehrdad, SAKURAI, Kiyofumi, OTAKE, Hiroyuki, TOKIWA, Naoya, WAKI, Hiroko, NOZAWA, Yasumitsu, KANAZAWA, Kazuhisa, OHSHIMA, Shigeo, HOSONO, Koji, SHIGA, Hitoshi, WATANABE, Yoshihisa, FUTATSUYAMA, Takuya, SHINDO, Yoshihiko, KOJIMA, Masatsugu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Signal convertors Transistors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	[...] noise cancellation circuits and the dual VDD-line scheme realize both a small die size and a fast programming.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2006.888299