Mapping of Single Event Burnout in Power MOSFETs

Mapping of Single Event Burnout in Power MOSFETs

Direct heavy ion mapping of single-event burnout (SEB) in power MOSFETs is presented for the first time utilizing the GSI microprobe with Xe and Ar ion beams. The mapping results indicate that the source and the channel of the power MOSFET are the most sensitive areas to SEB. Correlation to charge c...

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Veröffentlicht in:IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.2488-2494
Hauptverfasser: Haran, A., Barak, J., David, D., Refaeli, N., Fischer, B.E., Voss, K.-O., Du, G., Heiss, M.
Format: Artikel
Sprache:eng
Schlagworte:
Alpha particles
Argon
Channels
Collection
Correlation
Electric breakdown
Fuel consumption
heavy ion mapping
HEXFET
Ion beams
Mapping
microbeam
MOSFETs
Nuclear power generation
power MOSFET
Rectifiers
Shape
single event burnout (SEB)
single event gate rupture (SEGR)
Single event upset
Space missions
Testing
Voltage
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Beschreibung
Zusammenfassung:Direct heavy ion mapping of single-event burnout (SEB) in power MOSFETs is presented for the first time utilizing the GSI microprobe with Xe and Ar ion beams. The mapping results indicate that the source and the channel of the power MOSFET are the most sensitive areas to SEB. Correlation to charge collection mapping, as well as the difference between the mapping results of the two ion beams are discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.910851