High-Speed 985 nm Bottom-Emitting VCSEL Arrays for Chip-to-Chip Parallel Optical Interconnects

High-Speed 985 nm Bottom-Emitting VCSEL Arrays for Chip-to-Chip Parallel Optical Interconnects

For chip-scale interconnection, 4 times 12 vertical-cavity surface-emitting laser (VCSEL) arrays have been optimized. Each flip-chip bondable bottom-emitting oxide-confined 985 nm VCSEL have integrated backside lenses, and is capable of modulation at >20 Gb/s with a low current density of only 9....

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2007-09, Vol.13 (5), p.1332-1339
Hauptverfasser: Chao-Kun Lin, Tandon, A., Djordjev, K., Corzine, S.W., Tan, M.R.T.
Format: Artikel
Sprache:eng
Schlagworte:
Aggregates
AlGaAs oxide confinement
Arrays
Bandwidth
Bonding
Density
Frequency
High speed
high-speed vertical-cavity surface-emitting lasers (VCSELs)
Low currents
Modulation
Optical arrays
Optical interconnections
Optical interconnects
Semiconductor laser arrays
semiconductor lasers
Surface emitting lasers
Thermal resistance
Vertical cavity surface emission lasers
Vertical cavity surface emitting lasers
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Beschreibung
Zusammenfassung:For chip-scale interconnection, 4 times 12 vertical-cavity surface-emitting laser (VCSEL) arrays have been optimized. Each flip-chip bondable bottom-emitting oxide-confined 985 nm VCSEL have integrated backside lenses, and is capable of modulation at >20 Gb/s with a low current density of only 9.9 kA/cm 2 . An aggregate data rate of 960 Gb/s was obtained from a chip area of only 1.4 mm times 3.75 mm, or 18.3 Tb/(sldrcm 2 ).
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2007.906794