1.30-[micro]m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD
At the optimum growth rate, which was the same optimum growth rate for the PL characteristics, the threshold current and characteristic temperature were also at their optimum values.
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Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2005-09, Vol.11 (5), p.1099 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | At the optimum growth rate, which was the same optimum growth rate for the PL characteristics, the threshold current and characteristic temperature were also at their optimum values. |
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ISSN: | 1077-260X 1558-4542 |
DOI: | 10.1109/JSTQE.2005.854150 |