1.30-[micro]m GaInNAs laser diode with lifetime over 1000 hours grown by MOCVD

At the optimum growth rate, which was the same optimum growth rate for the PL characteristics, the threshold current and characteristic temperature were also at their optimum values.

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2005-09, Vol.11 (5), p.1099
Hauptverfasser: Mitomo, J, Yokozeki, M, Sato, Y, Hirano, Y, Hino, T, Narui, H
Format: Artikel
Sprache:eng
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Zusammenfassung:At the optimum growth rate, which was the same optimum growth rate for the PL characteristics, the threshold current and characteristic temperature were also at their optimum values.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2005.854150