Impact of metal work function on memory properties of charge-trap flash memory devices using fowler-nordheim P/E mode

This letter reports the impact of metal work function (/spl Phi//sub M/) on memory properties of charge-trap-Flash memory devices using Fowler-Nordheim program/erase mode. For eliminating electron back tunneling and hole back tunneling through the blocking oxide during an program/erase operation, a...

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Veröffentlicht in:	IEEE electron device letters 2006-06, Vol.27 (6), p.486-488
Hauptverfasser:	JEON, Sanghun, JEONG HEE HAN, LEE, Junghoon, CHOI, Sangmoo, HWANG, Hyunsang, KIM, Chungwoo
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Charge carrier processes Charge trap Data storage Design. Technologies. Operation analysis. Testing Devices Dielectrics electron back tunneling (EBT) Electron traps Electronics Exact sciences and technology Flash memory Flash memory (computers) Gates Gold Heterojunction bipolar transistors hole back tunneling (HBT) Integrated circuits Integrated circuits by function (including memories and processors) Laboratories Magnetic and optical mass memories Materials science and technology Memory devices Oxides Research and development Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stacks Storage and reproduction of information Transistors Tunneling work function Work functions
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Zusammenfassung:	This letter reports the impact of metal work function (/spl Phi//sub M/) on memory properties of charge-trap-Flash memory devices using Fowler-Nordheim program/erase mode. For eliminating electron back tunneling and hole back tunneling through the blocking oxide during an program/erase operation, a gate with /spl Phi//sub M/ of 5.1-5.7 eV on an Al/sub 2/O/sub 3/-SiN-SiO/sub 2/ (ANO) stack is necessary. Compared to a thickness optimized n/sup +/ poly-Si/ONO stack, a high-work-function gate on an ANO stack shows dramatic improvements in retention versus minimum erase state.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2006.874216