Charge-transport characteristics in bistable resistive Poly(N-vinylcarbazole) films

Charge-transport characteristics in bistable resistive Poly(N-vinylcarbazole) films

Charge-transport characteristics of bistable resistive poly(N-vinylcarbazole) films as a function of temperature have been investigated. It is found that the on-state charge transport is dominated by ohmic conduction, hopping with an energy scale of the order of /spl sim/ 20 meV. The off-state charg...

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Veröffentlicht in:IEEE electron device letters 2006-06, Vol.27 (6), p.451-453
Hauptverfasser: Yi-Sheng Lai, Chia-Hsun Tu, Dim-Lee Kwong, Chen, J.S.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Charge transport
Colossal magnetoresistance
Design. Technologies. Operation analysis. Testing
Devices
Electric resistance
Electrodes
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Low voltage
Magnetic materials
Microelectronics
Ohmic
Organic materials
poly(N-vinylcarbazole) (PVK)
Polyvinyl carbazole
Random access memory
resistance random access memory (RRAM)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Space charge
Substrates
Temperature
Voltage
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Zusammenfassung:Charge-transport characteristics of bistable resistive poly(N-vinylcarbazole) films as a function of temperature have been investigated. It is found that the on-state charge transport is dominated by ohmic conduction, hopping with an energy scale of the order of /spl sim/ 20 meV. The off-state charge transport appears to follow a transition from ohmic to space charge limited conduction with a shallow-trap distribution. Nonetheless, the poly(N-vinylcarbazole) (PVK) film does not possess its memory characteristics when operated at temperatures higher than 410 K. The PVK film can be operated at low voltage (< 2 V) with a high on/off current ratio as large as 10/sup 6/.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.874762