Improved reliability of HfO2/SiON gate stack by fluorine incorporation

Improved reliability of HfO2/SiON gate stack by fluorine incorporation

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Veröffentlicht in:IEEE electron device letters 2006-04, Vol.27 (4), p.240-242
Hauptverfasser: LU, Wen-Tai, CHIEIN, Chao-Hsin, LAN, Wen-Ting, LEE, Tsung-Chieh, LEHNEN, Peer, HUANG, Tiao-Yuan
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Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 242
container_issue 4
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container_title IEEE electron device letters
container_volume 27
creator LU, Wen-Tai
CHIEIN, Chao-Hsin
LAN, Wen-Ting
LEE, Tsung-Chieh
LEHNEN, Peer
HUANG, Tiao-Yuan
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doi_str_mv 10.1109/LED.2006.871539
format Article
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subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Improved reliability of HfO2/SiON gate stack by fluorine incorporation
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