A Radiation-Hardened Injection Locked Oscillator Devoted to Radio-Frequency Applications

Implemented in a 0.25 mum SiGe technology, a 5.2 GHz Injection Locked Oscillator (ILO) for Radio-Frequency (RF) applications is shown to be intrinsically radiation-hardened. Design principles and laser-based testing results are presented

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on nuclear science 2006-08, Vol.53 (4), p.2040-2046
Hauptverfasser:	Lapuyade, H., Pouget, V., Begueret, J.B., Hellmuth, P., Taris, T., Mazouffre, O., Fouillat, P., Deval, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit testing Engineering Sciences Frequency synchronization Frequency synthesizers Germanium silicon alloys Injection locked oscillators (ILOs) Injection-locked oscillators Lasers Micro and nanotechnologies Microelectronics Optical design Oscillators Phase locked loops radiation hardening Radio frequencies Radio frequency radio frequency (RF) SiGe technology Silicon germanides Silicon germanium single-event transients (SETs) Voltage-controlled oscillators
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Beschreibung
Zusammenfassung:	Implemented in a 0.25 mum SiGe technology, a 5.2 GHz Injection Locked Oscillator (ILO) for Radio-Frequency (RF) applications is shown to be intrinsically radiation-hardened. Design principles and laser-based testing results are presented
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2006.876669