Modeling hysteresis phenomena in nanotube field-effect transistors

A model is developed to explain a hysteresis observed experimentally in nanotube field-effect transistors. The model explains the hysteresis through trapping of electrons in an oxide layer. The Fowler-Nordheim tunneling mechanism is held responsible for the electron injection. The influence of diffe...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2005-03, Vol.4 (2), p.284-288
Hauptverfasser:	Robert-Peillard, A., Rotkin, S.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electron traps Electronics Electrostatics of one-dimensional (1-D) systems Exact sciences and technology FETs field-effect transistors (FETs) Geometry Hysteresis Integrated circuits Integrated circuits by function (including memories and processors) Molecular electronics, nanoelectronics MOSFETs Nanocomposites Nanomaterials Nanostructure Nanotechnology nanotube (NT) nonvolatile memory Nonvolatile memory NT transistors Oxides Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature dependence Threshold voltage Transistors Tunneling Voltage
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Beschreibung
Zusammenfassung:	A model is developed to explain a hysteresis observed experimentally in nanotube field-effect transistors. The model explains the hysteresis through trapping of electrons in an oxide layer. The Fowler-Nordheim tunneling mechanism is held responsible for the electron injection. The influence of different parameters such as the sweeping rate or the range of the gate voltage on the hysteresis is studied and compared with experimental results.
ISSN:	1536-125X 1941-0085
DOI:	10.1109/TNANO.2004.842053