A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel
A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the envir...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2005-09, Vol.26 (9), p.643-645 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 645 |
|---|---|
| container_issue | 9 |
| container_start_page | 643 |
| container_title | IEEE electron device letters |
| container_volume | 26 |
| creator | Lin, H.-C. Lee, M.-H. Su, C.-J. Huang, T.-Y. Lee, C.C. Yang, Y.-S. |
| description | A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter. |
| doi_str_mv | 10.1109/LED.2005.853669 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_912073498</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1498985</ieee_id><sourcerecordid>2543588841</sourcerecordid><originalsourceid>FETCH-LOGICAL-c414t-97c036be26729405621f68eb30b4a0de9d71a19326c1b0a7c8202c832b2c61a33</originalsourceid><addsrcrecordid>eNp9kU2LUzEUQIMoWKtrF26C4Mfmde7Nd5bDOKNCwYV1HfLSPJrh9aUmr5T596Z0YMDFrLLIuSe5HELeI6wQwV6tb7-tGIBcGcmVsi_IAqU0HUjFX5IFaIEdR1CvyZta7wFQCC0WZH1Na9ofxkj9tKVjPnUh15nu47zLWzpnOvi-pODnSDd3m0pPad7RQx4fut-JTn7Kp1QiDTs_TXF8S14Nfqzx3eO5JH_ubjc3P7r1r-8_b67XXRAo5s7qAFz1kSnNrGgfZDgoE3sOvfCwjXar0aPlTAXswetgGLBgOOtZUOg5X5IvF--h5L_HWGe3TzXEcfRTzMfqjG1KNAIa-flZkhmwUkjZwK_Pgqg1cMmkPTs__ofe52OZ2sLOIgPNhTUNurpAoeRaSxzcoaS9Lw8OwZ17udbLnXu5S6828elR62vw41D8FFJ9GtOgNG8xl-TDhUsxxqfr9qhtpn9MLJpf</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912073498</pqid></control><display><type>article</type><title>A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel</title><source>IEEE Electronic Library (IEL)</source><creator>Lin, H.-C. ; Lee, M.-H. ; Su, C.-J. ; Huang, T.-Y. ; Lee, C.C. ; Yang, Y.-S.</creator><creatorcontrib>Lin, H.-C. ; Lee, M.-H. ; Su, C.-J. ; Huang, T.-Y. ; Lee, C.C. ; Yang, Y.-S.</creatorcontrib><description>A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2005.853669</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Biosensors ; Channels ; Chemical and biological sensors ; Devices ; Electronics ; Etching ; Exact sciences and technology ; Fabrication ; General equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Lithography ; Manufacturing ; Nanobioscience ; Nanocomposites ; Nanomaterials ; Nanoscale devices ; Nanostructure ; Nanowires ; Physics ; poly-Si ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Sensing devices ; sensor device ; Sensor phenomena and characterization ; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing ; Spacers ; Thin film transistors ; thin-film transistors (TFTs) ; Transistors</subject><ispartof>IEEE electron device letters, 2005-09, Vol.26 (9), p.643-645</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-97c036be26729405621f68eb30b4a0de9d71a19326c1b0a7c8202c832b2c61a33</citedby><cites>FETCH-LOGICAL-c414t-97c036be26729405621f68eb30b4a0de9d71a19326c1b0a7c8202c832b2c61a33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1498985$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1498985$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17067356$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lin, H.-C.</creatorcontrib><creatorcontrib>Lee, M.-H.</creatorcontrib><creatorcontrib>Su, C.-J.</creatorcontrib><creatorcontrib>Huang, T.-Y.</creatorcontrib><creatorcontrib>Lee, C.C.</creatorcontrib><creatorcontrib>Yang, Y.-S.</creatorcontrib><title>A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.</description><subject>Applied sciences</subject><subject>Biosensors</subject><subject>Channels</subject><subject>Chemical and biological sensors</subject><subject>Devices</subject><subject>Electronics</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>General equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Lithography</subject><subject>Manufacturing</subject><subject>Nanobioscience</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanoscale devices</subject><subject>Nanostructure</subject><subject>Nanowires</subject><subject>Physics</subject><subject>poly-Si</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sensing devices</subject><subject>sensor device</subject><subject>Sensor phenomena and characterization</subject><subject>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</subject><subject>Spacers</subject><subject>Thin film transistors</subject><subject>thin-film transistors (TFTs)</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU2LUzEUQIMoWKtrF26C4Mfmde7Nd5bDOKNCwYV1HfLSPJrh9aUmr5T596Z0YMDFrLLIuSe5HELeI6wQwV6tb7-tGIBcGcmVsi_IAqU0HUjFX5IFaIEdR1CvyZta7wFQCC0WZH1Na9ofxkj9tKVjPnUh15nu47zLWzpnOvi-pODnSDd3m0pPad7RQx4fut-JTn7Kp1QiDTs_TXF8S14Nfqzx3eO5JH_ubjc3P7r1r-8_b67XXRAo5s7qAFz1kSnNrGgfZDgoE3sOvfCwjXar0aPlTAXswetgGLBgOOtZUOg5X5IvF--h5L_HWGe3TzXEcfRTzMfqjG1KNAIa-flZkhmwUkjZwK_Pgqg1cMmkPTs__ofe52OZ2sLOIgPNhTUNurpAoeRaSxzcoaS9Lw8OwZ17udbLnXu5S6828elR62vw41D8FFJ9GtOgNG8xl-TDhUsxxqfr9qhtpn9MLJpf</recordid><startdate>20050901</startdate><enddate>20050901</enddate><creator>Lin, H.-C.</creator><creator>Lee, M.-H.</creator><creator>Su, C.-J.</creator><creator>Huang, T.-Y.</creator><creator>Lee, C.C.</creator><creator>Yang, Y.-S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope><scope>7U5</scope></search><sort><creationdate>20050901</creationdate><title>A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel</title><author>Lin, H.-C. ; Lee, M.-H. ; Su, C.-J. ; Huang, T.-Y. ; Lee, C.C. ; Yang, Y.-S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c414t-97c036be26729405621f68eb30b4a0de9d71a19326c1b0a7c8202c832b2c61a33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Biosensors</topic><topic>Channels</topic><topic>Chemical and biological sensors</topic><topic>Devices</topic><topic>Electronics</topic><topic>Etching</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>General equipment and techniques</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Lithography</topic><topic>Manufacturing</topic><topic>Nanobioscience</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanoscale devices</topic><topic>Nanostructure</topic><topic>Nanowires</topic><topic>Physics</topic><topic>poly-Si</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sensing devices</topic><topic>sensor device</topic><topic>Sensor phenomena and characterization</topic><topic>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</topic><topic>Spacers</topic><topic>Thin film transistors</topic><topic>thin-film transistors (TFTs)</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, H.-C.</creatorcontrib><creatorcontrib>Lee, M.-H.</creatorcontrib><creatorcontrib>Su, C.-J.</creatorcontrib><creatorcontrib>Huang, T.-Y.</creatorcontrib><creatorcontrib>Lee, C.C.</creatorcontrib><creatorcontrib>Yang, Y.-S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lin, H.-C.</au><au>Lee, M.-H.</au><au>Su, C.-J.</au><au>Huang, T.-Y.</au><au>Lee, C.C.</au><au>Yang, Y.-S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2005-09-01</date><risdate>2005</risdate><volume>26</volume><issue>9</issue><spage>643</spage><epage>645</epage><pages>643-645</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2005.853669</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2005-09, Vol.26 (9), p.643-645 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_912073498 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Biosensors Channels Chemical and biological sensors Devices Electronics Etching Exact sciences and technology Fabrication General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Lithography Manufacturing Nanobioscience Nanocomposites Nanomaterials Nanoscale devices Nanostructure Nanowires Physics poly-Si Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensing devices sensor device Sensor phenomena and characterization Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Spacers Thin film transistors thin-film transistors (TFTs) Transistors |
| title | A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T13%3A27%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20simple%20and%20low-cost%20method%20to%20fabricate%20TFTs%20with%20poly-Si%20nanowire%20channel&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Lin,%20H.-C.&rft.date=2005-09-01&rft.volume=26&rft.issue=9&rft.spage=643&rft.epage=645&rft.pages=643-645&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2005.853669&rft_dat=%3Cproquest_RIE%3E2543588841%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912073498&rft_id=info:pmid/&rft_ieee_id=1498985&rfr_iscdi=true |