A simple and low-cost method to fabricate TFTs with poly-Si nanowire channel

A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the envir...

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Veröffentlicht in:	IEEE electron device letters 2005-09, Vol.26 (9), p.643-645
Hauptverfasser:	Lin, H.-C., Lee, M.-H., Su, C.-J., Huang, T.-Y., Lee, C.C., Yang, Y.-S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Biosensors Channels Chemical and biological sensors Devices Electronics Etching Exact sciences and technology Fabrication General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Lithography Manufacturing Nanobioscience Nanocomposites Nanomaterials Nanoscale devices Nanostructure Nanowires Physics poly-Si Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensing devices sensor device Sensor phenomena and characterization Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Spacers Thin film transistors thin-film transistors (TFTs) Transistors
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Beschreibung
Zusammenfassung:	A very simple and low-cost scheme is proposed for fabricating thin-film transistors with poly-Si nanowire (NW) channels. In this scheme, the poly-Si NW channel is formed by cleverly employing the poly-Si sidewall spacer technique. In addition, the poly-Si NW channel is genuinely exposed to the environment after the poly-Si sidewall spacer formation in the new scheme. This unique feature, together with its simplicity and low-cost, makes this approach very suitable for applications and manufacturing of bio-logic sensing devices. Good device performance is demonstrated in this letter.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2005.853669