Atomic layer-deposited Si-nitride/SiO2 stack gate dielectrics for future high-speed DRAM with enhanced reliability

Atomic layer-deposited Si-nitride/SiO2 stack gate dielectrics for future high-speed DRAM with enhanced reliability

Taking the identical hole mobility for the transistors with ALD stack gate dielectrics to that for the transistors with pure gate oxide both before and after hot carrier injection (previously reported) into account, the ALD stack dielectrics are a promising candidate for the gate dielectrics of futu...

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Veröffentlicht in:IEEE electron device letters 2005-08, Vol.26 (8), p.538-540
Hauptverfasser: NAKAJIMA, Anri, OHASHI, Takuo, SHIYANG ZHU, YOKOYAMA, Shigeyuki, MICHIMATA, Shigetomi, MIYAKE, Hideharu
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Field programmable gate arrays
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Storage and reproduction of information
Transistors
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Zusammenfassung:Taking the identical hole mobility for the transistors with ALD stack gate dielectrics to that for the transistors with pure gate oxide both before and after hot carrier injection (previously reported) into account, the ALD stack dielectrics are a promising candidate for the gate dielectrics of future high-speed, reliable DRAMs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2005.851822