Impacts of gate electrode materials on threshold voltage (Vth) instability in nMOS HfO2 gate stacks under DC and AC stressing

Impacts of gate electrode materials on threshold voltage (Vth) instability in nMOS HfO2 gate stacks under DC and AC stressing

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Veröffentlicht in:IEEE electron device letters 2005-08, Vol.26 (8), p.553-556
Hauptverfasser: XUGUANG WANG, PETERSON, Jeff, MAJHI, Prashant, GARDNER, Mark I, KWONG, Dim-Lee
Format: Artikel
Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 556
container_issue 8
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container_title IEEE electron device letters
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creator XUGUANG WANG
PETERSON, Jeff
MAJHI, Prashant
GARDNER, Mark I
KWONG, Dim-Lee
description
doi_str_mv 10.1109/LED.2005.851819
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source IEEE Electronic Library (IEL)
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Impacts of gate electrode materials on threshold voltage (Vth) instability in nMOS HfO2 gate stacks under DC and AC stressing
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