Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs
An experimental method of extracting the effective channel length L eff from measured gate tunneling current (I g ) of nanoscale n-MOSFETs is proposed. The tunneling current from gate to the source and drain (I gsd ) was measured while applying a reverse bias to the substrate, and it was corrected f...
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| Veröffentlicht in: | IEEE electron device letters 2009-11, Vol.30 (11), p.1191-1193 |
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| container_end_page | 1193 |
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| container_issue | 11 |
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| container_title | IEEE electron device letters |
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| creator | LEE, Nam-Hyun CHOI, Hwan-Wook KANG, Heesung KANG, Bongkoo |
| description | An experimental method of extracting the effective channel length L eff from measured gate tunneling current (I g ) of nanoscale n-MOSFETs is proposed. The tunneling current from gate to the source and drain (I gsd ) was measured while applying a reverse bias to the substrate, and it was corrected for the depletion effect of the source/drain junctions. The gate tunneling current to the substrate (I gc ) was obtained by subtracting I gsd from I g . L eff was calculated using a linear extrapolation of the I gc versus gate length plot. The proposed method is a very simple and quite accurate method of extracting L eff which does not require any additional assumptions and parameter extraction. |
| doi_str_mv | 10.1109/LED.2009.2030907 |
| format | Article |
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The tunneling current from gate to the source and drain (I gsd ) was measured while applying a reverse bias to the substrate, and it was corrected for the depletion effect of the source/drain junctions. The gate tunneling current to the substrate (I gc ) was obtained by subtracting I gsd from I g . L eff was calculated using a linear extrapolation of the I gc versus gate length plot. The proposed method is a very simple and quite accurate method of extracting L eff which does not require any additional assumptions and parameter extraction.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2030907</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Channels ; Current measurement ; Dielectric devices ; Drains ; Effective channel length ; Electronics ; Exact sciences and technology ; Extrapolation ; gate tunneling current ; gate-source/drain overlap length ; Gates ; Length measurement ; Molecular electronics, nanoelectronics ; MOSFET ; MOSFET circuits ; Nanocomposites ; Nanomaterials ; Nanostructure ; Parameter extraction ; Plasma measurements ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors ; Tunneling ; Voltage</subject><ispartof>IEEE electron device letters, 2009-11, Vol.30 (11), p.1191-1193</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c336t-62fdc7d771bcb3bc5ddf5066874cddf0d54ab3a458b86d30c2dc2400ed9c0f8d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5280281$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27928,27929,54762</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5280281$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22492398$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LEE, Nam-Hyun</creatorcontrib><creatorcontrib>CHOI, Hwan-Wook</creatorcontrib><creatorcontrib>KANG, Heesung</creatorcontrib><creatorcontrib>KANG, Bongkoo</creatorcontrib><title>Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>An experimental method of extracting the effective channel length L eff from measured gate tunneling current (I g ) of nanoscale n-MOSFETs is proposed. The tunneling current from gate to the source and drain (I gsd ) was measured while applying a reverse bias to the substrate, and it was corrected for the depletion effect of the source/drain junctions. The gate tunneling current to the substrate (I gc ) was obtained by subtracting I gsd from I g . L eff was calculated using a linear extrapolation of the I gc versus gate length plot. The proposed method is a very simple and quite accurate method of extracting L eff which does not require any additional assumptions and parameter extraction.</description><subject>Applied sciences</subject><subject>Channels</subject><subject>Current measurement</subject><subject>Dielectric devices</subject><subject>Drains</subject><subject>Effective channel length</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Extrapolation</subject><subject>gate tunneling current</subject><subject>gate-source/drain overlap length</subject><subject>Gates</subject><subject>Length measurement</subject><subject>Molecular electronics, nanoelectronics</subject><subject>MOSFET</subject><subject>MOSFET circuits</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Parameter extraction</subject><subject>Plasma measurements</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><subject>Tunneling</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kU1vFDEMhiMEEkvLHYlLhAScpjjfyREtA1TatgfgHGXywU41zSyTLGr_fbPaVQ8cuNiW_fiV7BehNwQuCAHzadN_uaAApgUGBtQztCJC6A6EZM_RChQnHSMgX6JXpdwCEM4VX6Hr_n4Xl_Eu5uomfBXrdg64zri_r4vzFfcpRV_HvxGvty7nOOFNzL_rFs8JX7s8F--miHN3dfPja_-znKMXyU0lvj7lM_Srtdffu83Nt8v1503nGZO1kzQFr4JSZPADG7wIIQmQUivuWwlBcDcwx4UetAwMPA2ecoAYjIekAztDH4-6u2X-s4-l2rux-DhNLsd5X6xWAqhRIBr54b8kk5wpMLKB7_4Bb-f9ktsV1hAKVDHGGwRHyC9zKUtMdtee55YHS8AefLDNB3vwwZ58aCvvT7ru8Ky0uOzH8rRHKTeUGd24t0dujDE-jQXVQDVhjyAAj1A</recordid><startdate>20091101</startdate><enddate>20091101</enddate><creator>LEE, Nam-Hyun</creator><creator>CHOI, Hwan-Wook</creator><creator>KANG, Heesung</creator><creator>KANG, Bongkoo</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20091101</creationdate><title>Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs</title><author>LEE, Nam-Hyun ; CHOI, Hwan-Wook ; KANG, Heesung ; KANG, Bongkoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-62fdc7d771bcb3bc5ddf5066874cddf0d54ab3a458b86d30c2dc2400ed9c0f8d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Channels</topic><topic>Current measurement</topic><topic>Dielectric devices</topic><topic>Drains</topic><topic>Effective channel length</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Extrapolation</topic><topic>gate tunneling current</topic><topic>gate-source/drain overlap length</topic><topic>Gates</topic><topic>Length measurement</topic><topic>Molecular electronics, nanoelectronics</topic><topic>MOSFET</topic><topic>MOSFET circuits</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Parameter extraction</topic><topic>Plasma measurements</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><topic>Tunneling</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LEE, Nam-Hyun</creatorcontrib><creatorcontrib>CHOI, Hwan-Wook</creatorcontrib><creatorcontrib>KANG, Heesung</creatorcontrib><creatorcontrib>KANG, Bongkoo</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Nam-Hyun</au><au>CHOI, Hwan-Wook</au><au>KANG, Heesung</au><au>KANG, Bongkoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2009-11-01</date><risdate>2009</risdate><volume>30</volume><issue>11</issue><spage>1191</spage><epage>1193</epage><pages>1191-1193</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>An experimental method of extracting the effective channel length L eff from measured gate tunneling current (I g ) of nanoscale n-MOSFETs is proposed. The tunneling current from gate to the source and drain (I gsd ) was measured while applying a reverse bias to the substrate, and it was corrected for the depletion effect of the source/drain junctions. The gate tunneling current to the substrate (I gc ) was obtained by subtracting I gsd from I g . L eff was calculated using a linear extrapolation of the I gc versus gate length plot. The proposed method is a very simple and quite accurate method of extracting L eff which does not require any additional assumptions and parameter extraction.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2009.2030907</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE electron device letters, 2009-11, Vol.30 (11), p.1191-1193 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Channels Current measurement Dielectric devices Drains Effective channel length Electronics Exact sciences and technology Extrapolation gate tunneling current gate-source/drain overlap length Gates Length measurement Molecular electronics, nanoelectronics MOSFET MOSFET circuits Nanocomposites Nanomaterials Nanostructure Parameter extraction Plasma measurements Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Tunneling Voltage |
| title | Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs |
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