Experimental Method to Extract Effective Channel Length of Nanoscale n-MOSFETs

An experimental method of extracting the effective channel length L eff from measured gate tunneling current (I g ) of nanoscale n-MOSFETs is proposed. The tunneling current from gate to the source and drain (I gsd ) was measured while applying a reverse bias to the substrate, and it was corrected for the depletion effect of the source/drain junctions. The gate tunneling current to the substrate (I gc ) was obtained by subtracting I gsd from I g . L eff was calculated using a linear extrapolation of the I gc versus gate length plot. The proposed method is a very simple and quite accurate method of extracting L eff which does not require any additional assumptions and parameter extraction.