High-Gain SiC MESFETs Using Source-Connected Field Plates

High-Gain SiC MESFETs Using Source-Connected Field Plates

We demonstrate for the first time improvement of radio-frequency (RF) gain of SiC MESFETs by using source-connected field plates (FPs). MESFETs fabricated with this approach show a new record maximum stable gain exceeding 15.7 dB at 3.1 GHz. This is 2.7 dB higher than the baseline devices without FP...

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Veröffentlicht in:IEEE electron device letters 2009-09, Vol.30 (9), p.952-953
Hauptverfasser: Sriram, S., Hagleitner, H., Namishia, D., Alcorn, T., Smith, T., Pulz, B.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Breakdown voltage
Capacitance
Devices
Electrodes
Electronics
Exact sciences and technology
Fabrication
Filled plastics
Gain
MESFETs
Noise levels
Passivation
Plates
Radio frequencies
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiC
Silicon carbide
source-connected field plates (FPs)
Thermal conductivity
Transistors
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Beschreibung
Zusammenfassung:We demonstrate for the first time improvement of radio-frequency (RF) gain of SiC MESFETs by using source-connected field plates (FPs). MESFETs fabricated with this approach show a new record maximum stable gain exceeding 15.7 dB at 3.1 GHz. This is 2.7 dB higher than the baseline devices without FP. RF power output greater than 4 W/mm was also achieved showing the potential of these devices for high-power operation.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2027211