Charge-Trapping-Type Flash Memory Device With Stacked High-[Formula Omitted] Charge-Trapping Layer

Charge-Trapping-Type Flash Memory Device With Stacked High-[Formula Omitted] Charge-Trapping Layer

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Veröffentlicht in:IEEE electron device letters 2009-07, Vol.30 (7), p.775
Hauptverfasser: Tsai, Ping-Hung, Chang-Liao, Kuei-Shu, Liu, Te-Chiang, Wang, Tien-Ko, Tzeng, Pei-Jer, Lin, Cha-Hsin, Lee, L.S, Tsai, Ming-Jinn
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container_issue 7
container_start_page 775
container_title IEEE electron device letters
container_volume 30
creator Tsai, Ping-Hung
Chang-Liao, Kuei-Shu
Liu, Te-Chiang
Wang, Tien-Ko
Tzeng, Pei-Jer
Lin, Cha-Hsin
Lee, L.S
Tsai, Ming-Jinn
description
doi_str_mv 10.1109/LED.2009.2022287
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_912026224</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2543453011</sourcerecordid><originalsourceid>FETCH-proquest_journals_9120262243</originalsourceid><addsrcrecordid>eNqNjjFvwjAUhK2KSg1t945P7KbPjpOQGYgYQB0aiQFVyIXXxDQhwXYq5d-ToRMTy93wnT4dY28Cp0Jg-r5eLqYSMR1CSjlLHlggomjGMYrDEQswUYKHAuMnNnbuhCiUSlTAvueltgXx3Oq2NeeC531LkFXalbChurE9LOjPHAi2xpfw6fXhl46wMkXJd1lj667S8FEb7-n4BTcyWOue7At7_NGVo9f_fmaTbJnPV7y1zaUj5_enprPnAe1TMbyPpVThXaMrSERKgw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912026224</pqid></control><display><type>article</type><title>Charge-Trapping-Type Flash Memory Device With Stacked High-[Formula Omitted] Charge-Trapping Layer</title><source>IEEE Electronic Library (IEL)</source><creator>Tsai, Ping-Hung ; Chang-Liao, Kuei-Shu ; Liu, Te-Chiang ; Wang, Tien-Ko ; Tzeng, Pei-Jer ; Lin, Cha-Hsin ; Lee, L.S ; Tsai, Ming-Jinn</creator><creatorcontrib>Tsai, Ping-Hung ; Chang-Liao, Kuei-Shu ; Liu, Te-Chiang ; Wang, Tien-Ko ; Tzeng, Pei-Jer ; Lin, Cha-Hsin ; Lee, L.S ; Tsai, Ming-Jinn</creatorcontrib><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2022287</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><ispartof>IEEE electron device letters, 2009-07, Vol.30 (7), p.775</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Tsai, Ping-Hung</creatorcontrib><creatorcontrib>Chang-Liao, Kuei-Shu</creatorcontrib><creatorcontrib>Liu, Te-Chiang</creatorcontrib><creatorcontrib>Wang, Tien-Ko</creatorcontrib><creatorcontrib>Tzeng, Pei-Jer</creatorcontrib><creatorcontrib>Lin, Cha-Hsin</creatorcontrib><creatorcontrib>Lee, L.S</creatorcontrib><creatorcontrib>Tsai, Ming-Jinn</creatorcontrib><title>Charge-Trapping-Type Flash Memory Device With Stacked High-[Formula Omitted] Charge-Trapping Layer</title><title>IEEE electron device letters</title><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNjjFvwjAUhK2KSg1t945P7KbPjpOQGYgYQB0aiQFVyIXXxDQhwXYq5d-ToRMTy93wnT4dY28Cp0Jg-r5eLqYSMR1CSjlLHlggomjGMYrDEQswUYKHAuMnNnbuhCiUSlTAvueltgXx3Oq2NeeC531LkFXalbChurE9LOjPHAi2xpfw6fXhl46wMkXJd1lj667S8FEb7-n4BTcyWOue7At7_NGVo9f_fmaTbJnPV7y1zaUj5_enprPnAe1TMbyPpVThXaMrSERKgw</recordid><startdate>20090701</startdate><enddate>20090701</enddate><creator>Tsai, Ping-Hung</creator><creator>Chang-Liao, Kuei-Shu</creator><creator>Liu, Te-Chiang</creator><creator>Wang, Tien-Ko</creator><creator>Tzeng, Pei-Jer</creator><creator>Lin, Cha-Hsin</creator><creator>Lee, L.S</creator><creator>Tsai, Ming-Jinn</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090701</creationdate><title>Charge-Trapping-Type Flash Memory Device With Stacked High-[Formula Omitted] Charge-Trapping Layer</title><author>Tsai, Ping-Hung ; Chang-Liao, Kuei-Shu ; Liu, Te-Chiang ; Wang, Tien-Ko ; Tzeng, Pei-Jer ; Lin, Cha-Hsin ; Lee, L.S ; Tsai, Ming-Jinn</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_9120262243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tsai, Ping-Hung</creatorcontrib><creatorcontrib>Chang-Liao, Kuei-Shu</creatorcontrib><creatorcontrib>Liu, Te-Chiang</creatorcontrib><creatorcontrib>Wang, Tien-Ko</creatorcontrib><creatorcontrib>Tzeng, Pei-Jer</creatorcontrib><creatorcontrib>Lin, Cha-Hsin</creatorcontrib><creatorcontrib>Lee, L.S</creatorcontrib><creatorcontrib>Tsai, Ming-Jinn</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsai, Ping-Hung</au><au>Chang-Liao, Kuei-Shu</au><au>Liu, Te-Chiang</au><au>Wang, Tien-Ko</au><au>Tzeng, Pei-Jer</au><au>Lin, Cha-Hsin</au><au>Lee, L.S</au><au>Tsai, Ming-Jinn</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge-Trapping-Type Flash Memory Device With Stacked High-[Formula Omitted] Charge-Trapping Layer</atitle><jtitle>IEEE electron device letters</jtitle><date>2009-07-01</date><risdate>2009</risdate><volume>30</volume><issue>7</issue><spage>775</spage><pages>775-</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/LED.2009.2022287</doi></addata></record>
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title Charge-Trapping-Type Flash Memory Device With Stacked High-[Formula Omitted] Charge-Trapping Layer
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T12%3A44%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Charge-Trapping-Type%20Flash%20Memory%20Device%20With%20Stacked%20High-%5BFormula%20Omitted%5D%20Charge-Trapping%20Layer&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Tsai,%20Ping-Hung&rft.date=2009-07-01&rft.volume=30&rft.issue=7&rft.spage=775&rft.pages=775-&rft.issn=0741-3106&rft.eissn=1558-0563&rft_id=info:doi/10.1109/LED.2009.2022287&rft_dat=%3Cproquest%3E2543453011%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912026224&rft_id=info:pmid/&rfr_iscdi=true