Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application

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Veröffentlicht in:IEEE electron device letters 2009-09, Vol.30 (9), p.916-918
Hauptverfasser: JUN YUAN, CHAN, Victor, BELYANSKY, Michael P, ELLER, Manfred, YONG MENG LEE, CAVE, Nigel, HUILING SHANG, YING LI, DIVAKARUNI, Rama, ROVEDO, Nivo, SARDESAI, Viraj, KANIKE, Narasimhulu, VARADARAJAN, Vidya, YU, Mickey, JONG HO YANG, JEONG, Y. K, SUNG KWON, O
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container_end_page 918
container_issue 9
container_start_page 916
container_title IEEE electron device letters
container_volume 30
creator JUN YUAN
CHAN, Victor
BELYANSKY, Michael P
ELLER, Manfred
YONG MENG LEE
CAVE, Nigel
HUILING SHANG
YING LI
DIVAKARUNI, Rama
ROVEDO, Nivo
SARDESAI, Viraj
KANIKE, Narasimhulu
VARADARAJAN, Vidya
YU, Mickey
JONG HO YANG
JEONG, Y. K
SUNG KWON, O
description
doi_str_mv 10.1109/LED.2009.2025895
format Article
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source IEEE Electronic Library (IEL)
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application
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