Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application
Gespeichert in:
Veröffentlicht in: | IEEE electron device letters 2009-09, Vol.30 (9), p.916-918 |
---|---|
Hauptverfasser: | , , , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 918 |
---|---|
container_issue | 9 |
container_start_page | 916 |
container_title | IEEE electron device letters |
container_volume | 30 |
creator | JUN YUAN CHAN, Victor BELYANSKY, Michael P ELLER, Manfred YONG MENG LEE CAVE, Nigel HUILING SHANG YING LI DIVAKARUNI, Rama ROVEDO, Nivo SARDESAI, Viraj KANIKE, Narasimhulu VARADARAJAN, Vidya YU, Mickey JONG HO YANG JEONG, Y. K SUNG KWON, O |
description | |
doi_str_mv | 10.1109/LED.2009.2025895 |
format | Article |
fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_journals_912022408</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2543453711</sourcerecordid><originalsourceid>FETCH-LOGICAL-p578-ac1969d7b5971739e971445be4aae1f25f251b74510f72ee076a0bc04c4dc1163</originalsourceid><addsrcrecordid>eNotUFFLwzAQDqLgnL77GARBHzrv2qRpHuecOqg6WGGPJe1S19klXZsx9u8NUzi-77j7-L7jCLlFGCGCfEqnL6MQQHoIeSL5GRkg50kAPI7OyQAEwyBCiC_JVd9vAJAxwQZk99wo86MdXXxkdFm7NZ0Zuqjdnn6GdN6ofqto1mnltto4ag11a00fEOCRLlWlO1rZ7jRL7SGY2N6dmrk9-FWmy7Wxjf0-0nHbNnWpXG3NNbmoVNPrm38ekux1mk3eg_TrbTYZp0HLRRKoEmUsV6LgUqCIpPbEGC80U0pjFXJfWAjGESoRag0iVlCUwEq2KhHjaEju_mzbzu72unf5xu474xNzif5HIYPEi-7_RaovVVN1ypR1n7ddvVXdMQ_9DcBEGP0CBcVl1Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912022408</pqid></control><display><type>article</type><title>Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application</title><source>IEEE Electronic Library (IEL)</source><creator>JUN YUAN ; CHAN, Victor ; BELYANSKY, Michael P ; ELLER, Manfred ; YONG MENG LEE ; CAVE, Nigel ; HUILING SHANG ; YING LI ; DIVAKARUNI, Rama ; ROVEDO, Nivo ; SARDESAI, Viraj ; KANIKE, Narasimhulu ; VARADARAJAN, Vidya ; YU, Mickey ; JONG HO YANG ; JEONG, Y. K ; SUNG KWON, O</creator><creatorcontrib>JUN YUAN ; CHAN, Victor ; BELYANSKY, Michael P ; ELLER, Manfred ; YONG MENG LEE ; CAVE, Nigel ; HUILING SHANG ; YING LI ; DIVAKARUNI, Rama ; ROVEDO, Nivo ; SARDESAI, Viraj ; KANIKE, Narasimhulu ; VARADARAJAN, Vidya ; YU, Mickey ; JONG HO YANG ; JEONG, Y. K ; SUNG KWON, O</creatorcontrib><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2009.2025895</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>IEEE electron device letters, 2009-09, Vol.30 (9), p.916-918</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21960472$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JUN YUAN</creatorcontrib><creatorcontrib>CHAN, Victor</creatorcontrib><creatorcontrib>BELYANSKY, Michael P</creatorcontrib><creatorcontrib>ELLER, Manfred</creatorcontrib><creatorcontrib>YONG MENG LEE</creatorcontrib><creatorcontrib>CAVE, Nigel</creatorcontrib><creatorcontrib>HUILING SHANG</creatorcontrib><creatorcontrib>YING LI</creatorcontrib><creatorcontrib>DIVAKARUNI, Rama</creatorcontrib><creatorcontrib>ROVEDO, Nivo</creatorcontrib><creatorcontrib>SARDESAI, Viraj</creatorcontrib><creatorcontrib>KANIKE, Narasimhulu</creatorcontrib><creatorcontrib>VARADARAJAN, Vidya</creatorcontrib><creatorcontrib>YU, Mickey</creatorcontrib><creatorcontrib>JONG HO YANG</creatorcontrib><creatorcontrib>JEONG, Y. K</creatorcontrib><creatorcontrib>SUNG KWON, O</creatorcontrib><title>Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application</title><title>IEEE electron device letters</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotUFFLwzAQDqLgnL77GARBHzrv2qRpHuecOqg6WGGPJe1S19klXZsx9u8NUzi-77j7-L7jCLlFGCGCfEqnL6MQQHoIeSL5GRkg50kAPI7OyQAEwyBCiC_JVd9vAJAxwQZk99wo86MdXXxkdFm7NZ0Zuqjdnn6GdN6ofqto1mnltto4ag11a00fEOCRLlWlO1rZ7jRL7SGY2N6dmrk9-FWmy7Wxjf0-0nHbNnWpXG3NNbmoVNPrm38ekux1mk3eg_TrbTYZp0HLRRKoEmUsV6LgUqCIpPbEGC80U0pjFXJfWAjGESoRag0iVlCUwEq2KhHjaEju_mzbzu72unf5xu474xNzif5HIYPEi-7_RaovVVN1ypR1n7ddvVXdMQ_9DcBEGP0CBcVl1Q</recordid><startdate>20090901</startdate><enddate>20090901</enddate><creator>JUN YUAN</creator><creator>CHAN, Victor</creator><creator>BELYANSKY, Michael P</creator><creator>ELLER, Manfred</creator><creator>YONG MENG LEE</creator><creator>CAVE, Nigel</creator><creator>HUILING SHANG</creator><creator>YING LI</creator><creator>DIVAKARUNI, Rama</creator><creator>ROVEDO, Nivo</creator><creator>SARDESAI, Viraj</creator><creator>KANIKE, Narasimhulu</creator><creator>VARADARAJAN, Vidya</creator><creator>YU, Mickey</creator><creator>JONG HO YANG</creator><creator>JEONG, Y. K</creator><creator>SUNG KWON, O</creator><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>IQODW</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20090901</creationdate><title>Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application</title><author>JUN YUAN ; CHAN, Victor ; BELYANSKY, Michael P ; ELLER, Manfred ; YONG MENG LEE ; CAVE, Nigel ; HUILING SHANG ; YING LI ; DIVAKARUNI, Rama ; ROVEDO, Nivo ; SARDESAI, Viraj ; KANIKE, Narasimhulu ; VARADARAJAN, Vidya ; YU, Mickey ; JONG HO YANG ; JEONG, Y. K ; SUNG KWON, O</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p578-ac1969d7b5971739e971445be4aae1f25f251b74510f72ee076a0bc04c4dc1163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JUN YUAN</creatorcontrib><creatorcontrib>CHAN, Victor</creatorcontrib><creatorcontrib>BELYANSKY, Michael P</creatorcontrib><creatorcontrib>ELLER, Manfred</creatorcontrib><creatorcontrib>YONG MENG LEE</creatorcontrib><creatorcontrib>CAVE, Nigel</creatorcontrib><creatorcontrib>HUILING SHANG</creatorcontrib><creatorcontrib>YING LI</creatorcontrib><creatorcontrib>DIVAKARUNI, Rama</creatorcontrib><creatorcontrib>ROVEDO, Nivo</creatorcontrib><creatorcontrib>SARDESAI, Viraj</creatorcontrib><creatorcontrib>KANIKE, Narasimhulu</creatorcontrib><creatorcontrib>VARADARAJAN, Vidya</creatorcontrib><creatorcontrib>YU, Mickey</creatorcontrib><creatorcontrib>JONG HO YANG</creatorcontrib><creatorcontrib>JEONG, Y. K</creatorcontrib><creatorcontrib>SUNG KWON, O</creatorcontrib><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JUN YUAN</au><au>CHAN, Victor</au><au>BELYANSKY, Michael P</au><au>ELLER, Manfred</au><au>YONG MENG LEE</au><au>CAVE, Nigel</au><au>HUILING SHANG</au><au>YING LI</au><au>DIVAKARUNI, Rama</au><au>ROVEDO, Nivo</au><au>SARDESAI, Viraj</au><au>KANIKE, Narasimhulu</au><au>VARADARAJAN, Vidya</au><au>YU, Mickey</au><au>JONG HO YANG</au><au>JEONG, Y. K</au><au>SUNG KWON, O</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application</atitle><jtitle>IEEE electron device letters</jtitle><date>2009-09-01</date><risdate>2009</risdate><volume>30</volume><issue>9</issue><spage>916</spage><epage>918</epage><pages>916-918</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><cop>New York, NY</cop><pub>Institute of Electrical and Electronics Engineers</pub><doi>10.1109/LED.2009.2025895</doi><tpages>3</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0741-3106 |
ispartof | IEEE electron device letters, 2009-09, Vol.30 (9), p.916-918 |
issn | 0741-3106 1558-0563 |
language | eng |
recordid | cdi_proquest_journals_912022408 |
source | IEEE Electronic Library (IEL) |
subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
title | Blanket SMT With In Situ N2 Plasma Treatment on the (100) Wafer for the Low-Cost Low-Power Technology Application |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T23%3A19%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Blanket%20SMT%20With%20In%20Situ%20N2%20Plasma%20Treatment%20on%20the%20(100)%20Wafer%20for%20the%20Low-Cost%20Low-Power%20Technology%20Application&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=JUN%20YUAN&rft.date=2009-09-01&rft.volume=30&rft.issue=9&rft.spage=916&rft.epage=918&rft.pages=916-918&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2009.2025895&rft_dat=%3Cproquest_pasca%3E2543453711%3C/proquest_pasca%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912022408&rft_id=info:pmid/&rfr_iscdi=true |