Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs

Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- [Formula Omitted] CMOSFETs

[...] thin-TiN and thick-TiN WFMs are preferred for the reduction in threshold voltage in nMOSFETs and pMOSFETs with poly-Si/TiN gate electrodes, respectively.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2009-05, Vol.30 (5), p.466
Hauptverfasser: Kadoshima, M, Matsuki, T, Miyazaki, S, Shiraishi, K, Chikyo, T, Yamada, K, Aoyama, T, Nara, Y, Ohji, Y
Format: Artikel
Sprache:eng
Schlagworte:
Electrodes
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Zusammenfassung:[...] thin-TiN and thick-TiN WFMs are preferred for the reduction in threshold voltage in nMOSFETs and pMOSFETs with poly-Si/TiN gate electrodes, respectively.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2009.2016585