Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs

Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Acce¿le¿rateur National d'Ions Lourds, Caen, France, and the University of...

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Veröffentlicht in:	IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3078-3084
Hauptverfasser:	Pellish, J.A., Reed, R.A., McMorrow, D., Vizkelethy, G., Cavrois, V.F., Baggio, J., Paillet, P., Duhamel, O., Moen, K.A., Phillips, S.D., Diestelhorst, R.M., Cressler, J.D., Sutton, A.K., Raman, A., Turowski, M., Dodd, P.E., Alles, M.L., Schrimpf, R.D., Marshall, P.W., LaBel, K.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog integrated circuits Broadband Current measurement Digital integrated circuits Germanium silicon alloys Heavy ion Heterojunction bipolar transistors Integrated circuit packaging Laboratories Microorganisms Oscilloscopes Packages Phosphors real-time oscilloscope Silicon germanides Silicon germanium silicon-germanium heterojunction bipolar transistor (SiGe HBT) Strikes transient
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Zusammenfassung:	Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam and high- and low-energy broadbeam sources at the Grand Acce¿le¿rateur National d'Ions Lourds, Caen, France, and the University of Jyva¿skyla¿, Finland. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2009.2034158