Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays
The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be impor...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2009-08, Vol.56 (4), p.2167-2170 |
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| container_end_page | 2170 |
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| container_title | IEEE transactions on nuclear science |
| container_volume | 56 |
| creator | Howe, C.L. Weller, R.A. Reed, R.A. Sierawski, B.D. Marshall, P.W. Marshall, C.J. Mendenhall, M.H. Schrimpf, R.D. Hubbs, J.E. |
| description | The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be important in a variety of semiconductor devices. |
| doi_str_mv | 10.1109/TNS.2009.2013348 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_912015280</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5204512</ieee_id><sourcerecordid>1671320305</sourcerecordid><originalsourceid>FETCH-LOGICAL-c323t-b68653dbb29b9b87f11bc4a575b441be5930785f1c1e95b20a9f7523f894843a3</originalsourceid><addsrcrecordid>eNpdkEtrGzEQgEVJoY7be6EX0VMum2r08ErHkDhNwH2A07OQdkdGwZEcaffgfx8Fhx5ymWFmvhmGj5CvwC4BmPnx8Ht7yRkzLYAQUn8gC1BKd6B6fUYWjIHujDTmEzmv9bGVUjG1IH4dAg5TpTnQ7VxKntMY047-chOW6PZtkOjfkqecuvs0zgOOdJ2w7I70Bg-5xik2ICa6cWWHdBv3cWiNm5hHpFeluGP9TD6Gdgi_vOUl-Xe7fri-6zZ_ft5fX226QXAxdX6lV0qM3nPjjdd9APCDdKpXXkrwqIxgvVYBBkCjPGfOhF5xEbSRWgonluTidPdQ8vOMdbJPsQ6437uEea4WVj0IzgRTDf3-Dn3Mc0ntO2ugCVRcswaxEzSUXGvBYA8lPrlytMDsq3PbnNtX5_bNeVv5dlqJiPgfV5xJBVy8AIQ-fBY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912015280</pqid></control><display><type>article</type><title>Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays</title><source>IEEE Electronic Library (IEL)</source><creator>Howe, C.L. ; Weller, R.A. ; Reed, R.A. ; Sierawski, B.D. ; Marshall, P.W. ; Marshall, C.J. ; Mendenhall, M.H. ; Schrimpf, R.D. ; Hubbs, J.E.</creator><creatorcontrib>Howe, C.L. ; Weller, R.A. ; Reed, R.A. ; Sierawski, B.D. ; Marshall, P.W. ; Marshall, C.J. ; Mendenhall, M.H. ; Schrimpf, R.D. ; Hubbs, J.E.</creatorcontrib><description>The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be important in a variety of semiconductor devices.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2009.2013348</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Arrays ; Deposition ; Devices ; Diodes ; Direct ionization ; Energy (nuclear) ; energy deposited ; Focal plane ; focal plane array ; Geant4 ; Indium ; Monte Carlo ; NASA ; nuclear reactions ; Particle scattering ; PIN photodiodes ; Protons ; Semiconductor diodes ; Semiconductor materials ; Sensor arrays ; Silicon ; Silicon diodes ; Space technology</subject><ispartof>IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2167-2170</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c323t-b68653dbb29b9b87f11bc4a575b441be5930785f1c1e95b20a9f7523f894843a3</citedby><cites>FETCH-LOGICAL-c323t-b68653dbb29b9b87f11bc4a575b441be5930785f1c1e95b20a9f7523f894843a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5204512$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5204512$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Howe, C.L.</creatorcontrib><creatorcontrib>Weller, R.A.</creatorcontrib><creatorcontrib>Reed, R.A.</creatorcontrib><creatorcontrib>Sierawski, B.D.</creatorcontrib><creatorcontrib>Marshall, P.W.</creatorcontrib><creatorcontrib>Marshall, C.J.</creatorcontrib><creatorcontrib>Mendenhall, M.H.</creatorcontrib><creatorcontrib>Schrimpf, R.D.</creatorcontrib><creatorcontrib>Hubbs, J.E.</creatorcontrib><title>Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be important in a variety of semiconductor devices.</description><subject>Arrays</subject><subject>Deposition</subject><subject>Devices</subject><subject>Diodes</subject><subject>Direct ionization</subject><subject>Energy (nuclear)</subject><subject>energy deposited</subject><subject>Focal plane</subject><subject>focal plane array</subject><subject>Geant4</subject><subject>Indium</subject><subject>Monte Carlo</subject><subject>NASA</subject><subject>nuclear reactions</subject><subject>Particle scattering</subject><subject>PIN photodiodes</subject><subject>Protons</subject><subject>Semiconductor diodes</subject><subject>Semiconductor materials</subject><subject>Sensor arrays</subject><subject>Silicon</subject><subject>Silicon diodes</subject><subject>Space technology</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtrGzEQgEVJoY7be6EX0VMum2r08ErHkDhNwH2A07OQdkdGwZEcaffgfx8Fhx5ymWFmvhmGj5CvwC4BmPnx8Ht7yRkzLYAQUn8gC1BKd6B6fUYWjIHujDTmEzmv9bGVUjG1IH4dAg5TpTnQ7VxKntMY047-chOW6PZtkOjfkqecuvs0zgOOdJ2w7I70Bg-5xik2ICa6cWWHdBv3cWiNm5hHpFeluGP9TD6Gdgi_vOUl-Xe7fri-6zZ_ft5fX226QXAxdX6lV0qM3nPjjdd9APCDdKpXXkrwqIxgvVYBBkCjPGfOhF5xEbSRWgonluTidPdQ8vOMdbJPsQ6437uEea4WVj0IzgRTDf3-Dn3Mc0ntO2ugCVRcswaxEzSUXGvBYA8lPrlytMDsq3PbnNtX5_bNeVv5dlqJiPgfV5xJBVy8AIQ-fBY</recordid><startdate>20090801</startdate><enddate>20090801</enddate><creator>Howe, C.L.</creator><creator>Weller, R.A.</creator><creator>Reed, R.A.</creator><creator>Sierawski, B.D.</creator><creator>Marshall, P.W.</creator><creator>Marshall, C.J.</creator><creator>Mendenhall, M.H.</creator><creator>Schrimpf, R.D.</creator><creator>Hubbs, J.E.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>20090801</creationdate><title>Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays</title><author>Howe, C.L. ; Weller, R.A. ; Reed, R.A. ; Sierawski, B.D. ; Marshall, P.W. ; Marshall, C.J. ; Mendenhall, M.H. ; Schrimpf, R.D. ; Hubbs, J.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c323t-b68653dbb29b9b87f11bc4a575b441be5930785f1c1e95b20a9f7523f894843a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Arrays</topic><topic>Deposition</topic><topic>Devices</topic><topic>Diodes</topic><topic>Direct ionization</topic><topic>Energy (nuclear)</topic><topic>energy deposited</topic><topic>Focal plane</topic><topic>focal plane array</topic><topic>Geant4</topic><topic>Indium</topic><topic>Monte Carlo</topic><topic>NASA</topic><topic>nuclear reactions</topic><topic>Particle scattering</topic><topic>PIN photodiodes</topic><topic>Protons</topic><topic>Semiconductor diodes</topic><topic>Semiconductor materials</topic><topic>Sensor arrays</topic><topic>Silicon</topic><topic>Silicon diodes</topic><topic>Space technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Howe, C.L.</creatorcontrib><creatorcontrib>Weller, R.A.</creatorcontrib><creatorcontrib>Reed, R.A.</creatorcontrib><creatorcontrib>Sierawski, B.D.</creatorcontrib><creatorcontrib>Marshall, P.W.</creatorcontrib><creatorcontrib>Marshall, C.J.</creatorcontrib><creatorcontrib>Mendenhall, M.H.</creatorcontrib><creatorcontrib>Schrimpf, R.D.</creatorcontrib><creatorcontrib>Hubbs, J.E.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Howe, C.L.</au><au>Weller, R.A.</au><au>Reed, R.A.</au><au>Sierawski, B.D.</au><au>Marshall, P.W.</au><au>Marshall, C.J.</au><au>Mendenhall, M.H.</au><au>Schrimpf, R.D.</au><au>Hubbs, J.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2009-08-01</date><risdate>2009</risdate><volume>56</volume><issue>4</issue><spage>2167</spage><epage>2170</epage><pages>2167-2170</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be important in a variety of semiconductor devices.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2009.2013348</doi><tpages>4</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Arrays Deposition Devices Diodes Direct ionization Energy (nuclear) energy deposited Focal plane focal plane array Geant4 Indium Monte Carlo NASA nuclear reactions Particle scattering PIN photodiodes Protons Semiconductor diodes Semiconductor materials Sensor arrays Silicon Silicon diodes Space technology |
| title | Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T19%3A42%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20Surrounding%20Materials%20on%20Proton-Induced%20Energy%20Deposition%20in%20Large%20Silicon%20Diode%20Arrays&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Howe,%20C.L.&rft.date=2009-08-01&rft.volume=56&rft.issue=4&rft.spage=2167&rft.epage=2170&rft.pages=2167-2170&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2009.2013348&rft_dat=%3Cproquest_RIE%3E1671320305%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912015280&rft_id=info:pmid/&rft_ieee_id=5204512&rfr_iscdi=true |