Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays

Effects of Surrounding Materials on Proton-Induced Energy Deposition in Large Silicon Diode Arrays

The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be impor...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 2009-08, Vol.56 (4), p.2167-2170
Hauptverfasser: Howe, C.L., Weller, R.A., Reed, R.A., Sierawski, B.D., Marshall, P.W., Marshall, C.J., Mendenhall, M.H., Schrimpf, R.D., Hubbs, J.E.
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
Deposition
Devices
Diodes
Direct ionization
Energy (nuclear)
energy deposited
Focal plane
focal plane array
Geant4
Indium
Monte Carlo
NASA
nuclear reactions
Particle scattering
PIN photodiodes
Protons
Semiconductor diodes
Semiconductor materials
Sensor arrays
Silicon
Silicon diodes
Space technology
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The effects of materials surrounding the active devices on single event-induced charge generation in a proton-irradiated Si diode array are shown be significant. Particle scatters in layers underlying the device have an impact on the response of a focal plane array. This effect is likely to be important in a variety of semiconductor devices.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2013348