A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-¿s speed, and good endurance. This was achieved using a charge-tra...

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Veröffentlicht in:	IEEE electron device letters 2010-03, Vol.31 (3), p.201-203
Hauptverfasser:	Nai-Chao Su, Shui Jinn Wang, Chin, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atherosclerosis Charge-trapping-engineered Flash (CTEF) Design. Technologies. Operation analysis. Testing Devices Dielectrics Displays Durability Electric potential Electrodes Electronics Endurance Exact sciences and technology Extrapolation Flash memory Flash memory (computers) high- kappa Indium InGaZnO Integrated circuits Integrated circuits by function (including memories and processors) metal-oxide-nitride-oxide-semiconductor (MONOS) MONOS devices Nonvolatile memory nonvolatile memory (NVM) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature Thin film transistors Transistors Voltage
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Zusammenfassung:	We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-¿s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high- ¿ layers.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2009.2037986