Characteristics of Double-Gate Ga-In-Zn-O Thin-Film Transistor

A Ga-In-Zn-O thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swin...

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Veröffentlicht in:	IEEE electron device letters 2010-03, Vol.31 (3), p.219-221
Hauptverfasser:	SON, Kyoung-Seok, JUNG, Ji-Sim, LEE, Kwang-Hee, KIM, Tae-Sang, PARK, Joon-Seok, CHOI, Yun-Hyuk, PARK, Keechan, KWON, Jang-Yeon, KOO, Bonwon, LEE, Sang-Yoon
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Dielectric substrates Displays Double gate Electrodes Electronics Exact sciences and technology Fabrication Ga-In-Zn-O (GIZO) oxide-semiconductor Passivation Production Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Sputtering Thin film transistors thin-film transistor (TFT) Threshold voltage Transistors
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Beschreibung
Zusammenfassung:	A Ga-In-Zn-O thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swing are improved from 3.65 cm 2 /(V·s) and 0.44 V/dec to 18.9 cm 2 /(V·s) and 0.14 V/dec, respectively, compared with the single-gate structure. We can modulate the threshold voltage of either gate by adjusting the bias on the other gate.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2009.2038805