High-performance and low-cost 0.15-[mu]m nMOSFETs using simultaneous N-gate and source/drain doping process

High-performance and low-cost 0.15-[mu]m nMOSFETs using simultaneous N-gate and source/drain doping process

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Veröffentlicht in:IEEE transactions on electron devices 2004-01, Vol.51 (1), p.92
Hauptverfasser: Cha, Han-Seob, Lee, Won-Gyu, Heo, Sang-Bum, Ryu, Hyuk-Hyun, Lee, Jong-Gon, Lee, Jeong-Gun, Lee, Hi-Deok
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container_issue 1
container_start_page 92
container_title IEEE transactions on electron devices
container_volume 51
creator Cha, Han-Seob
Lee, Won-Gyu
Heo, Sang-Bum
Ryu, Hyuk-Hyun
Lee, Jong-Gon
Lee, Jeong-Gun
Lee, Hi-Deok
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doi_str_mv 10.1109/TED.2003.820940
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title High-performance and low-cost 0.15-[mu]m nMOSFETs using simultaneous N-gate and source/drain doping process
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