The effects of fluorine on parametrics and reliability in a 0.18-[mu]m 3.5/6.8 nm dual gate oxide CMOS technology

The effects of fluorine on parametrics and reliability in a 0.18-[mu]m 3.5/6.8 nm dual gate oxide CMOS technology

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Veröffentlicht in:IEEE transactions on electron devices 2001-07, Vol.48 (7), p.1346
Hauptverfasser: Hook, T.B, Adler, E, Guarin, F, Lukaitis, J, Rovedo, N, Schruefer, K
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container_title IEEE transactions on electron devices
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creator Hook, T.B
Adler, E
Guarin, F
Lukaitis, J
Rovedo, N
Schruefer, K
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title The effects of fluorine on parametrics and reliability in a 0.18-[mu]m 3.5/6.8 nm dual gate oxide CMOS technology
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