Impact of CdTe/CdZnTe substrate resistivity on performance degradation of long-wavelength n+-on-p HgCdTe infrared photodiodes

Impact of CdTe/CdZnTe substrate resistivity on performance degradation of long-wavelength n+-on-p HgCdTe infrared photodiodes

A model for the effect of the n-CdTe substrate resistivity on the quantum efficiency, η, and the dynamic resistance-area product, RdA, of a n +-on-p HgCdTe backside illuminated photodiode has been developed, taking into account the effect of the graded heterointerface between CdTe/CdZnTe and HgCdTe...

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Veröffentlicht in:IEEE transactions on electron devices 2000-05, Vol.47 (5), p.978
Hauptverfasser: Dhar, V, Garg, A.K, Bhan, R.K
Format: Artikel
Sprache:eng
Schlagworte:
Electric fields
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Zusammenfassung:A model for the effect of the n-CdTe substrate resistivity on the quantum efficiency, η, and the dynamic resistance-area product, RdA, of a n +-on-p HgCdTe backside illuminated photodiode has been developed, taking into account the effect of the graded heterointerface between CdTe/CdZnTe and HgCdTe on the homojunction photodiode.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.841229