Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode

We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO/sub...

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Veröffentlicht in:IEEE transactions on electron devices 2000-05, Vol.47 (5), p.1052-1060
Hauptverfasser: Daniel, E.S., Cartoixa, X., Frensley, W.R., Ting, D.Z.-Y., McGill, T.C.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Boundaries
Devices
Diffusion processes
Diodes
Oxides
Simulation
Transmission
Tunnels (transportation)
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Beschreibung
Zusammenfassung:We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO/sub 2//Si structure and an Al/SiO/sub 2//n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.841240