Effect of physical stress on the degradation of thin SiO2 films under electrical stress

Effect of physical stress on the degradation of thin SiO2 films under electrical stress

The interfacial stress is generated due to the volume expansion from Si to SiO2 during the thermal oxidation, and it is a strong function of growth conditions, such as temperature, growth rate, and growth ambient.

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Veröffentlicht in:IEEE transactions on electron devices 2000-04, Vol.47 (4), p.746
Hauptverfasser: Yang, T.-C, Saraswat, K.C
Format: Artikel
Sprache:eng
Schlagworte:
Fourier transforms
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Zusammenfassung:The interfacial stress is generated due to the volume expansion from Si to SiO2 during the thermal oxidation, and it is a strong function of growth conditions, such as temperature, growth rate, and growth ambient.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.830989