Packaged photonic probes for an on-wafer broad-band millimeter-wave network analyzer

We report the fabrication of integrated and packaged active photonic probes that enable on-wafer measurements of electrical scattering parameters with a bandwidth exceeding 300 GHz. The probes use a high-speed uni-traveling-carrier photodiode (UTC-PD) to optically generate the electrical stimulus an...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE photonics technology letters 2000-09, Vol.12 (9), p.1225-1227
Hauptverfasser:	Sahri, N., Nagatsuma, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bandwidth Electric variables measurement High speed High speed optical techniques Micro-optics Millimeter wave measurements Millimeter wave technology Networks Optical device fabrication Optical scattering Packaging Photodiodes Photonics Probes Sampling Scattering Scattering parameters
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We report the fabrication of integrated and packaged active photonic probes that enable on-wafer measurements of electrical scattering parameters with a bandwidth exceeding 300 GHz. The probes use a high-speed uni-traveling-carrier photodiode (UTC-PD) to optically generate the electrical stimulus and the electro-optic sampling (EOS) technique to measure the electrical signals. The modules are packaged using micro-optic technology and exhibit excellent optical characteristics. They are easy to use, enable reliable and reproducible measurements, and should help to overcome the bandwidth-limitation of present all-electronic similar systems.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/68.874243