Power-amplifier modules covering 70-113 GHz using MMICs

A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and anoth...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2001-01, Vol.49 (1), p.9-16
Hauptverfasser: Wang, Huei, Samoska, L., Gaier, T., Peralta, A., Hsin-Hsing Liao, Leong, Y.C., Weinreb, S., Chen, Y.C., Nishimoto, M., Lai, R.
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Sprache:eng
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Zusammenfassung:A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-/spl mu/m AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, is also addressed in this paper.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.899956