A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling
For Part I see ibid., vol.49, no.2, pp.232-8 (2002). Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft breakdown. These scaling principles allow us to conc...
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| Veröffentlicht in: | IEEE transactions on electron devices 2002-02, Vol.49 (2), p.239-246 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 49 |
| creator | Alam, M.A. Weir, B.E. Silverman, P.J. |
| description | For Part I see ibid., vol.49, no.2, pp.232-8 (2002). Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft breakdown. These scaling principles allow us to conclude that breakdown in ultrathin oxides stressed at operating voltages (1.0-1.5 V) can never be hard, which should allow a more relaxed reliability specification for these oxides. |
| doi_str_mv | 10.1109/16.981213 |
| format | Article |
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Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft breakdown. These scaling principles allow us to conclude that breakdown in ultrathin oxides stressed at operating voltages (1.0-1.5 V) can never be hard, which should allow a more relaxed reliability specification for these oxides.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/16.981213</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Breakdown ; Circuit breakers ; Devices ; Electric breakdown ; Electric potential ; Oxides ; Specifications ; Voltage</subject><ispartof>IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.239-246</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft breakdown. These scaling principles allow us to conclude that breakdown in ultrathin oxides stressed at operating voltages (1.0-1.5 V) can never be hard, which should allow a more relaxed reliability specification for these oxides.</description><subject>Breakdown</subject><subject>Circuit breakers</subject><subject>Devices</subject><subject>Electric breakdown</subject><subject>Electric potential</subject><subject>Oxides</subject><subject>Specifications</subject><subject>Voltage</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0TtPwzAQB3ALgUQpDKxMFgMCqSl-JI7NVlU8KlWiA8zB8aNNmybFTkD99rikYmBATOeTf_eXTgfAOUZDjJG4xWwoOCaYHoAeTpI0Eixmh6CHEOaRoJwegxPvl6FlcUx64G0EfdPqLawt9LVtoKw0XEinYe6MXOn6s4IRnEnXwMnkDs5cUaliUxq_G5CBDGCzKNSqMt4Pvoc_6rKRcwO9kmVRzU_BkZWlN2f72gevD_cv46do-vw4GY-mkaKMN1HOtNFWsbAEsVZgKRDiWsQi1ZZwlRgkkJIp0blGhDBLaW5seDJriIoton1w1eVuXP3eGt9k68IrU5ayMnXrM8IZoTT5B0zTGMdYBHj9J8QIC5YgInCgl7_osm5dFfbNOI8TEhJ5QDcdUq723hmbbVyxlm4bkrLd8TLMsu54wV50tjDG_Lj95xc0cpIA</recordid><startdate>20020201</startdate><enddate>20020201</enddate><creator>Alam, M.A.</creator><creator>Weir, B.E.</creator><creator>Silverman, P.J.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft breakdown. These scaling principles allow us to conclude that breakdown in ultrathin oxides stressed at operating voltages (1.0-1.5 V) can never be hard, which should allow a more relaxed reliability specification for these oxides.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/16.981213</doi><tpages>8</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2002-02, Vol.49 (2), p.239-246 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Breakdown Circuit breakers Devices Electric breakdown Electric potential Oxides Specifications Voltage |
| title | A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling |
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