A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling

For Part I see ibid., vol.49, no.2, pp.232-8 (2002). Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft breakdown. These scaling principles allow us to conc...

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Veröffentlicht in:IEEE transactions on electron devices 2002-02, Vol.49 (2), p.239-246
Hauptverfasser: Alam, M.A., Weir, B.E., Silverman, P.J.
Format: Artikel
Sprache:eng
Schlagworte:
Breakdown
Circuit breakers
Devices
Electric breakdown
Electric potential
Oxides
Specifications
Voltage
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Zusammenfassung:For Part I see ibid., vol.49, no.2, pp.232-8 (2002). Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft breakdown. These scaling principles allow us to conclude that breakdown in ultrathin oxides stressed at operating voltages (1.0-1.5 V) can never be hard, which should allow a more relaxed reliability specification for these oxides.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.981213