Fundamental study of an electrostatic chuck for silicon wafer handling

Mechanical holding systems of a wafer might cause serious problems in the semiconductor industry. Electrostatic wafer handling might be one of the possible solutions for such problems. The authors have investigated an attractive force on a silicon wafer by using an electrostatic chuck which consists...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on industry applications 2002-05, Vol.38 (3), p.840-845
Hauptverfasser: Asano, K., Hatakeyama, F., Yatsuzuka, K.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Mechanical holding systems of a wafer might cause serious problems in the semiconductor industry. Electrostatic wafer handling might be one of the possible solutions for such problems. The authors have investigated an attractive force on a silicon wafer by using an electrostatic chuck which consists of interdigitated electrodes and a dielectric thin film. Electrostatic attractive force increases as the applied voltage increases, and with a thinner dielectric layer. With the narrower width and spacing of interdigitated electrodes, the stronger electrostatic force is obtained. When 1-mm width and spacing interdigitated electrodes and 50-/spl mu/m-thick polymer film are used, the strongest force obtained was about 17 N in the vertical direction at 3.5 kV, for a 4-in silicon wafer. When DC high voltage is used, some residual force remains, even after the applied voltage is removed. This was overcome by using variable-frequency AC high voltage.
ISSN:0093-9994
1939-9367
DOI:10.1109/TIA.2002.1003438