Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

Conventional oxide reliability studies determine oxide lifetime by measuring the time to breakdown or quasi-breakdown (QB). In ultrathin gate oxides with T/sub ox/

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 2003-04, Vol.50 (4), p.967-972
Hauptverfasser: Wei Yip Loh, Byung Jin Cho, Ming Fu Li, Chan, D.S.H., Chew Hoe Ang, Jia Zhen Zheng, Dim Lee Kwong
Format: Artikel
Sprache:eng
Schlagworte:
Current density
Dielectric films
Leakage currents
MOSFETs
Semiconductor device modeling
Semiconductor device reliability
Statistics
Weibull distributions
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Beschreibung
Zusammenfassung:Conventional oxide reliability studies determine oxide lifetime by measuring the time to breakdown or quasi-breakdown (QB). In ultrathin gate oxides with T/sub ox/
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.812105