Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brigh...

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Veröffentlicht in:	IEEE photonics technology letters 2003-10, Vol.15 (10), p.1345-1347
Hauptverfasser:	Su, Y.K., Wang, H.C., Lin, C.L., Chen, W.B., Chen, S.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Brightness Current carriers Devices Leakage current Light emitting diodes Passivation Rough surfaces Semiconductor diodes Semiconductor impurities Sulfides Surface emitting lasers Surface roughness Surface treatment
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