Improvement of AlGaInP light emitting diode by sulfide passivation

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brigh...

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Veröffentlicht in:IEEE photonics technology letters 2003-10, Vol.15 (10), p.1345-1347
Hauptverfasser: Su, Y.K., Wang, H.C., Lin, C.L., Chen, W.B., Chen, S.M.
Format: Artikel
Sprache:eng
Schlagworte:
Brightness
Current carriers
Devices
Leakage current
Light emitting diodes
Passivation
Rough surfaces
Semiconductor diodes
Semiconductor impurities
Sulfides
Surface emitting lasers
Surface roughness
Surface treatment
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Zusammenfassung:The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2003.818064