Large-signal response of p-i-n photodetectors using short pulses with small spot sizes
In this paper, the response of a surface-normal p-i-n photodetector that was incorporated in an optically controlled optical gate was analyzed using short-pulsed, high-energy optical inputs with small spot sizes. Simulation results based in part on diffusive conduction were compared against the expe...
Gespeichert in:
Veröffentlicht in: | IEEE journal of quantum electronics 2004-02, Vol.40 (2), p.143-151 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In this paper, the response of a surface-normal p-i-n photodetector that was incorporated in an optically controlled optical gate was analyzed using short-pulsed, high-energy optical inputs with small spot sizes. Simulation results based in part on diffusive conduction were compared against the experimental data, providing an understanding of the device response. Results also demonstrated that p-i-n photodetectors may be designed so that reducing the spot size, counterintuitively, results in negligible additional field screening. |
---|---|
ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.2003.821533 |