SOI CMOS compatible low-power microheater optimization for the fabrication of smart gas sensors
In this paper, an original design of a polysilicon loop-shaped microheater on a 1-/spl mu/m thin-stacked dielectric membrane is presented. This design ensures high thermal uniformity and insulation and very low power consumption (20 mW for heating at 400/spl deg/C). Moreover, the use of completely C...
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Veröffentlicht in: | IEEE sensors journal 2004-10, Vol.4 (5), p.670-680 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, an original design of a polysilicon loop-shaped microheater on a 1-/spl mu/m thin-stacked dielectric membrane is presented. This design ensures high thermal uniformity and insulation and very low power consumption (20 mW for heating at 400/spl deg/C). Moreover, the use of completely CMOS compatible tetramethyl ammonium hydroxide-based bulk-micromachining techniques allows an easy, smart gas sensor integration in SOI-CMOS technology. |
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ISSN: | 1530-437X 1558-1748 |
DOI: | 10.1109/JSEN.2004.833516 |