SOI CMOS compatible low-power microheater optimization for the fabrication of smart gas sensors

In this paper, an original design of a polysilicon loop-shaped microheater on a 1-/spl mu/m thin-stacked dielectric membrane is presented. This design ensures high thermal uniformity and insulation and very low power consumption (20 mW for heating at 400/spl deg/C). Moreover, the use of completely C...

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Veröffentlicht in:IEEE sensors journal 2004-10, Vol.4 (5), p.670-680
Hauptverfasser: Laconte, J., Dupont, C., Flandre, D., Raskin, J.-P.
Format: Artikel
Sprache:eng
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Zusammenfassung:In this paper, an original design of a polysilicon loop-shaped microheater on a 1-/spl mu/m thin-stacked dielectric membrane is presented. This design ensures high thermal uniformity and insulation and very low power consumption (20 mW for heating at 400/spl deg/C). Moreover, the use of completely CMOS compatible tetramethyl ammonium hydroxide-based bulk-micromachining techniques allows an easy, smart gas sensor integration in SOI-CMOS technology.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2004.833516