Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN

We have studied the effect of the electron beam irradiation on ZnO and GaN by using cathodoluminescence (CL). The bandedge emissions of ZnO and GaN usually decrease during CL observation, but they can increase in certain cases, such as Zn-plane in ZnO. These variations depend on not only the specime...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of materials science. Materials in electronics 2008-12, Vol.19 (Suppl 1), p.307-310
Hauptverfasser:	Dierre, B., Yuan, X. L., Yao, Y. Z., Yokoyama, M., Sekiguchi, T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Electronics Exact sciences and technology Materials Materials Science Optical and Electronic Materials Semiconductors
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!