Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN

We have studied the effect of the electron beam irradiation on ZnO and GaN by using cathodoluminescence (CL). The bandedge emissions of ZnO and GaN usually decrease during CL observation, but they can increase in certain cases, such as Zn-plane in ZnO. These variations depend on not only the specime...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials science. Materials in electronics 2008-12, Vol.19 (Suppl 1), p.307-310
Hauptverfasser: Dierre, B., Yuan, X. L., Yao, Y. Z., Yokoyama, M., Sekiguchi, T.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have studied the effect of the electron beam irradiation on ZnO and GaN by using cathodoluminescence (CL). The bandedge emissions of ZnO and GaN usually decrease during CL observation, but they can increase in certain cases, such as Zn-plane in ZnO. These variations depend on not only the specimens and the electron beam conditions but also the nature of the luminescence centers and the chemical nature of the material surface. This work suggests that the electron beam induces some modifications near the surface region.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-008-9603-7