Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-[mu]m cutoff wavelengths

Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-[mu]m cutoff wavelengths

Measurement and analysis of the material transmission characteristics indicate that the small residual inefficiencies may be limited by a parasitic absorption process.

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Veröffentlicht in:IEEE journal of quantum electronics 2005-02, Vol.41 (2), p.227
Hauptverfasser: Lindle, J.R, Bewley, W.W, Vurgaftman, I, Chul Soo Kim, Chul Soo Kim, Meyer, J.R, Johnson, J.L, Thomas, M.L, Piquette, E.C, Tennant, W.E
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container_end_page
container_issue 2
container_start_page 227
container_title IEEE journal of quantum electronics
container_volume 41
creator Lindle, J.R
Bewley, W.W
Vurgaftman, I
Chul Soo Kim, Chul Soo Kim
Meyer, J.R
Johnson, J.L
Thomas, M.L
Piquette, E.C
Tennant, W.E
description Measurement and analysis of the material transmission characteristics indicate that the small residual inefficiencies may be limited by a parasitic absorption process.
doi_str_mv 10.1109/JQE.2004.839721
format Article
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title Negative luminescence from large-area HgCdTe photodiode arrays with 4.8-6.0-[mu]m cutoff wavelengths
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